Load Type;IGBT;MOSFET/Driven Configuration;Low Side;High Side;Half-Bridge/Number of Channels;2/Voltage - Supply;9.2V~25V;3V~5.5V/Isolation voltage(Vrms);5000/CMTI(kV/us);100kV/us/Current - Output Low(IOL);8A/Current - Output High(IOH);4A/Rise Time;18ns/Operating Temperature;-40℃~+125℃@(Ta)/Fall Time;12ns/Propagation Delay(tpd);30ns;30ns/Input... Read more

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