ADI-JFETs-177DFN 8L

Description

/Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;350mW/RDS(on);300Ω/Operating Temperature;-55℃~+135℃@(Tj)


350mW 300Ω 30V DFN-8(2x2) JFETs RoHS

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/Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;350mW/RDS(on);300Ω/Operating Temperature;-55℃~+135℃@(Tj)350mW 300Ω 30V DFN-8(2x2) JFETs RoHS Read more

$11.16 Excl. VAT

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    Description

    /Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;350mW/RDS(on);300Ω/Operating Temperature;-55℃~+135℃@(Tj)


    350mW 300Ω 30V DFN-8(2x2) JFETs RoHS

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