FET Type;1 P-Channel/Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;500mW/RDS(on);75Ω/Ciss-Input Capacitance;25pF@15V/Operating Temperature;-55℃~+150℃500mW 1 P-Channel 75Ω 30V TO-18-3 JFETs RoHS Read more

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