ADI-JFETs-2N5116 TO-18 3L

Description

/Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;500mW/RDS(on);150Ω/Ciss-Input Capacitance;25pF@15V/Operating Temperature;-55℃~+150℃@(Tj)


500mW 150Ω 30V TO-18-3 JFETs RoHS

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/Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;500mW/RDS(on);150Ω/Ciss-Input Capacitance;25pF@15V/Operating Temperature;-55℃~+150℃@(Tj)500mW 150Ω 30V TO-18-3 JFETs RoHS Read more

$13.86 Excl. VAT

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    Description

    /Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;500mW/RDS(on);150Ω/Ciss-Input Capacitance;25pF@15V/Operating Temperature;-55℃~+150℃@(Tj)


    500mW 150Ω 30V TO-18-3 JFETs RoHS

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