FET Type;2 N-Channel/Gate-Source Cutoff Voltage (VGS(off));500mV@2mA/Gate-Source Breakdown Voltage (Vgss);40V/Pd - Power Dissipation;500mW/RDS(on);50Ω/Drain Current (Idss);7mA@15V/Ciss-Input Capacitance;25pF@15V/Operating Temperature;-55℃~+150℃2 N-Channel 500mW 7mA@15V 50Ω... Read more

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