FET Type;1 P-Channel/Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;350mW/RDS(on);125Ω/Operating Temperature;-55℃~+135℃350mW 1 P-Channel 125Ω 30V TO-92 JFETs RoHS Read more

$23.58 Excl. VAT

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