FET Type;1 N-channel/Gate-Source Cutoff Voltage (VGS(off));800mV@10nA/Gate-Source Breakdown Voltage (Vgss);40V/Pd - Power Dissipation;350mW/Ciss-Input Capacitance;4.5pF@15V/Operating Temperature;-55℃~+150℃1 N-channel 350mW 40V TO-92 JFETs RoHS Read more

$14.88 Excl. VAT

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