/Gate-Source Breakdown Voltage (Vgss);25V/Pd - Power Dissipation;350mW/RDS(on);35Ω/Ciss-Input Capacitance;4pF@10V/Operating Temperature;-55℃~+150℃@(Tj)350mW 35Ω 25V TO-92 JFETs RoHS Read more

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