FET Type;1 N-channel/Gate-Source Cutoff Voltage (VGS(off));1V@1nA/Gate-Source Breakdown Voltage (Vgss);25V/Pd - Power Dissipation;350mW/RDS(on);35Ω/Drain Current (Idss);12mA@10V/Ciss-Input Capacitance;4pF@10V/Operating Temperature;-55℃~+150℃1 N-channel 350mW 12mA@10V 35Ω... Read more

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