FET Type;2 N-Channel/Gate-Source Cutoff Voltage (VGS(off));1V@1nA/Gate-Source Breakdown Voltage (Vgss);60V/Pd - Power Dissipation;400mW/Drain Current (Idss);500uA@20V/Ciss-Input Capacitance;6pF@20V/Operating Temperature;-55℃~+150℃2 N-Channel 500uA@20V 400mW 60V... Read more

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