FET Type;2 N-Channel/Gate-Source Breakdown Voltage (Vgss);25V/Pd - Power Dissipation;500mW/Drain Current (Idss);7mA@10V/Ciss-Input Capacitance;5pF@10V/Operating Temperature;-55℃~+150℃7mA@10V 500mW 2 N-Channel 25V SOIC-8 JFETs RoHS Read more

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