FET Type;2 N-Channel/Gate-Source Cutoff Voltage (VGS(off));600mV@1nA/Gate-Source Breakdown Voltage (Vgss);40V/Pd - Power Dissipation;500mW/Drain Current (Idss);60uA@10V/Ciss-Input Capacitance;3pF@10V/Operating Temperature;-55℃~+150℃2 N-Channel 500mW 60uA@10V 40V... Read more

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