FET Type;2 N-Channel/Gate-Source Breakdown Voltage (Vgss);60V/Pd - Power Dissipation;400mW/Ciss-Input Capacitance;8pF@15V/Operating Temperature;-55℃~+150℃@(Tj)400mW 2 N-Channel 60V SOIC-8 JFETs RoHS Read more

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