FET Type;1 N-channel/Gate-Source Cutoff Voltage (VGS(off));200mV@1nA/Gate-Source Breakdown Voltage (Vgss);40V/Pd - Power Dissipation;400mW/Drain Current (Idss);10mA@10V/Ciss-Input Capacitance;20pF@15V/Operating Temperature;-55℃~+135℃400mW 1 N-channel 10mA@10V 40V... Read more

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