FET Type;2 N-Channel/Gate-Source Cutoff Voltage (VGS(off));300mV@1uA/Gate-Source Breakdown Voltage (Vgss);40V/Pd - Power Dissipation;400mW/Drain Current (Idss);6mA@10V/Ciss-Input Capacitance;25pF@10V/Operating Temperature;-55℃~+150℃2 N-Channel 400mW 6mA@10V 40V... Read more

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