FET Type;1 N-channel/Gate-Source Cutoff Voltage (VGS(off));2V@1nA/Gate-Source Breakdown Voltage (Vgss);40V/Pd - Power Dissipation;300mW/Drain Current (Idss);200uA@10V/Ciss-Input Capacitance;3pF@10V/Operating Temperature;-55℃~+150℃300mW 1 N-channel 200uA@10V 40V... Read more

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