ADI-JFETs-PN4391 TO-92 3L

Description

/Gate-Source Breakdown Voltage (Vgss);40V/Pd - Power Dissipation;350mW/RDS(on);30Ω/Ciss-Input Capacitance;16pF@20V/Operating Temperature;-55℃~+150℃@(Tj)


350mW 30Ω 40V TO-92 JFETs RoHS

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/Gate-Source Breakdown Voltage (Vgss);40V/Pd - Power Dissipation;350mW/RDS(on);30Ω/Ciss-Input Capacitance;16pF@20V/Operating Temperature;-55℃~+150℃@(Tj)350mW 30Ω 40V TO-92 JFETs RoHS Read more

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    Description

    /Gate-Source Breakdown Voltage (Vgss);40V/Pd - Power Dissipation;350mW/RDS(on);30Ω/Ciss-Input Capacitance;16pF@20V/Operating Temperature;-55℃~+150℃@(Tj)


    350mW 30Ω 40V TO-92 JFETs RoHS

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