/Gate-Source Breakdown Voltage (Vgss);40V/Pd - Power Dissipation;350mW/RDS(on);100Ω/Ciss-Input Capacitance;16pF@20V/Operating Temperature;-55℃~+150℃@(Tj)350mW 100Ω 40V TO-92 JFETs RoHS Read more

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