FET Type;4 N-Channel/Gate-Source Breakdown Voltage (Vgss);20V/Pd - Power Dissipation;500mW/RDS(on);70Ω/Operating Temperature;-55℃~+150℃@(Tj)500mW 4 N-Channel 70Ω 20V DIP-16 JFETs RoHS Read more

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