FET Type;1 N-channel/Gate-Source Breakdown Voltage (Vgss);35V/Pd - Power Dissipation;350mW/RDS(on);100Ω/Ciss-Input Capacitance;12pF@10V/Operating Temperature;-55℃~+150℃1 N-channel 350mW 100Ω 35V SOT-23-3 JFETs RoHS Read more

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