FET Type;1 N-channel/Gate-Source Cutoff Voltage (VGS(off));800mV@10nA/Gate-Source Breakdown Voltage (Vgss);40V/Pd - Power Dissipation;350mW/Drain Current (Idss);900uA@15V/Ciss-Input Capacitance;4.5pF@15V/Operating Temperature;-55℃~+150℃900uA@15V 1 N-channel 350mW 40V... Read more

$15.60 Excl. VAT

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