FET Type;1 N-channel/Gate-Source Breakdown Voltage (Vgss);25V/Pd - Power Dissipation;350mW/RDS(on);35Ω/Ciss-Input Capacitance;4pF@10V/Operating Temperature;-55℃~+150℃1 N-channel 350mW 35Ω 25V SOT-23-3 JFETs RoHS Read more

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