FET Type;1 P-Channel/Gate-Source Cutoff Voltage (VGS(off));150mV@100nA/Gate-Source Breakdown Voltage (Vgss);25V/Pd - Power Dissipation;400mW/RDS(on);150Ω/Drain Current (Idss);2.6mA@10V/Ciss-Input Capacitance;105pF@10V/Operating Temperature;-55℃~+135℃400mW 1 P-Channel 2.6mA@10V 150Ω... Read more

$37.32 Excl. VAT

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