ADI-JFETs-U308 TO-18 3L

Description

/Gate-Source Breakdown Voltage (Vgss);25V/Pd - Power Dissipation;500mW/RDS(on);35Ω/Ciss-Input Capacitance;4pF@10V/Operating Temperature;-55℃~+150℃@(Tj)


500mW 35Ω 25V TO-18-3 JFETs RoHS

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/Gate-Source Breakdown Voltage (Vgss);25V/Pd - Power Dissipation;500mW/RDS(on);35Ω/Ciss-Input Capacitance;4pF@10V/Operating Temperature;-55℃~+150℃@(Tj)500mW 35Ω 25V TO-18-3 JFETs RoHS Read more

$12.42 Excl. VAT

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    Description

    /Gate-Source Breakdown Voltage (Vgss);25V/Pd - Power Dissipation;500mW/RDS(on);35Ω/Ciss-Input Capacitance;4pF@10V/Operating Temperature;-55℃~+150℃@(Tj)


    500mW 35Ω 25V TO-18-3 JFETs RoHS

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