/Gate-Source Cutoff Voltage (VGS(off));1V@1nA/Gate-Source Breakdown Voltage (Vgss);25V/Pd - Power Dissipation;500mW/RDS(on);35Ω/Drain Current (Idss);12mA@10V/Ciss-Input Capacitance;4pF@10V/Operating Temperature;-55℃~+150℃@(Tj)12mA@10V 500mW 35Ω 25V TO-18-3 JFETs RoHS Read more

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