AGMSEMI-Single FETs, MOSFETs-AGM028N08A

Description

Drain to Source Voltage;85V/Gate Charge(Qg);60nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;167W/RDS(on);2.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);63pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;3.1nF/Output Capacitance(Coss);1.24nF


N-Channel 85V 170A 167W Surface Mount PDFN5x6

Product form

Drain to Source Voltage;85V/Gate Charge(Qg);60nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;167W/RDS(on);2.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);63pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;85V/Gate Charge(Qg);60nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;167W/RDS(on);2.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);63pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;3.1nF/Output Capacitance(Coss);1.24nF


    N-Channel 85V 170A 167W Surface Mount PDFN5x6

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