AGMSEMI-Single FETs, MOSFETs-AGM035N10A

Description

Drain to Source Voltage;100V/Gate Charge(Qg);67.2nC@10V/Number;1 N-channel/Pd - Power Dissipation;104W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);91pF/Current - Continuous Drain(Id);112A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;3.5nF/Output Capacitance(Coss);1.432nF


N-Channel 100V 112A 104W Surface Mount PDFN(5x6)

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);67.2nC@10V/Number;1 N-channel/Pd - Power Dissipation;104W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);91pF/Current - Continuous Drain(Id);112A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);67.2nC@10V/Number;1 N-channel/Pd - Power Dissipation;104W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);91pF/Current - Continuous Drain(Id);112A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;3.5nF/Output Capacitance(Coss);1.432nF


    N-Channel 100V 112A 104W Surface Mount PDFN(5x6)

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