AGMSEMI-Single FETs, MOSFETs-AGM035N10D

Description

Drain to Source Voltage;100V/Gate Charge(Qg);67nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;131W/RDS(on);5.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);85pF/Current - Continuous Drain(Id);112A/Ciss-Input Capacitance;3.587nF/Output Capacitance(Coss);1.445nF


N-Channel 100V 112A 131W Surface Mount TO-252

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);67nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;131W/RDS(on);5.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);85pF/Current - Continuous Drain(Id);112A/Ciss-Input Capacitance;3.587nF/Output Capacitance(Coss);1.445nFN-Channel 100V... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);67nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;131W/RDS(on);5.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);85pF/Current - Continuous Drain(Id);112A/Ciss-Input Capacitance;3.587nF/Output Capacitance(Coss);1.445nF


    N-Channel 100V 112A 131W Surface Mount TO-252

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