AGMSEMI-Single FETs, MOSFETs-AGM042N10C

Description

Drain to Source Voltage;100V/Gate Charge(Qg);65.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);4.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);56pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;2.98nF/Output Capacitance(Coss);1.342nF


N-Channel 100V 110A 125W Through Hole TO-220

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);65.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);4.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);56pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);65.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);4.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);56pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;2.98nF/Output Capacitance(Coss);1.342nF


    N-Channel 100V 110A 125W Through Hole TO-220

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