AGMSEMI-Single FETs, MOSFETs-AGM056N08C

Description

Drain to Source Voltage;85V/Gate Charge(Qg);80nC@42.5V/Number;1 N-channel/Pd - Power Dissipation;173.6W/RDS(on);4.4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);138A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.02nF


N-Channel 85V 138A 173.6W Through Hole TO-220

Product form

Drain to Source Voltage;85V/Gate Charge(Qg);80nC@42.5V/Number;1 N-channel/Pd - Power Dissipation;173.6W/RDS(on);4.4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);138A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;85V/Gate Charge(Qg);80nC@42.5V/Number;1 N-channel/Pd - Power Dissipation;173.6W/RDS(on);4.4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);138A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.02nF


    N-Channel 85V 138A 173.6W Through Hole TO-220

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