AGMSEMI-Single FETs, MOSFETs-AGM08T15C

Description

Drain to Source Voltage;150V/Gate Charge(Qg);130nC@10V/Number;1 N-channel/Pd - Power Dissipation;305W/RDS(on);5.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);205pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;8.525nF/Output Capacitance(Coss);700pF


150V 150A 305W Through Hole TO-220

Product form

Drain to Source Voltage;150V/Gate Charge(Qg);130nC@10V/Number;1 N-channel/Pd - Power Dissipation;305W/RDS(on);5.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);205pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;150V/Gate Charge(Qg);130nC@10V/Number;1 N-channel/Pd - Power Dissipation;305W/RDS(on);5.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);205pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;8.525nF/Output Capacitance(Coss);700pF


    150V 150A 305W Through Hole TO-220

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