AGMSEMI-Single FETs, MOSFETs-AGM1065M

Description

Drain to Source Voltage;100V/Gate Charge(Qg);20nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;2.5W/RDS(on);150mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;845pF


N-Channel+P-Channel Array 100V 10A 2.5W Surface Mount SOP-8

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);20nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;2.5W/RDS(on);150mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);20nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;2.5W/RDS(on);150mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;845pF


    N-Channel+P-Channel Array 100V 10A 2.5W Surface Mount SOP-8

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