AGMSEMI-Single FETs, MOSFETs-AGM1095MAP

Description

Drain to Source Voltage;100V/Gate Charge(Qg);25.4nC@10V;33nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;33.7W;32W/RDS(on);96mΩ@10V;220mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);32pF;40pF/Current - Continuous Drain(Id);7A;6A/Gate Threshold Voltage (Vgs(th));2.2V;1.6V/Ciss-Input Capacitance;999pF;1.6nF/Output Capacitance(Coss);46pF;86pF


N-Channel+P-Channel 100V 33.7W 7A Surface Mount PDFN(3.3x3.3)

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);25.4nC@10V;33nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;33.7W;32W/RDS(on);96mΩ@10V;220mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);32pF;40pF/Current -... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);25.4nC@10V;33nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;33.7W;32W/RDS(on);96mΩ@10V;220mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);32pF;40pF/Current - Continuous Drain(Id);7A;6A/Gate Threshold Voltage (Vgs(th));2.2V;1.6V/Ciss-Input Capacitance;999pF;1.6nF/Output Capacitance(Coss);46pF;86pF


    N-Channel+P-Channel 100V 33.7W 7A Surface Mount PDFN(3.3x3.3)

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