AGMSEMI-Single FETs, MOSFETs-AGM10N65F

Description

Drain to Source Voltage;650V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Pd - Power Dissipation;65W/RDS(on);770mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.3pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.702nF/Output Capacitance(Coss);127pF


N-Channel 650V 10A 65W Through Hole TO-220F

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Pd - Power Dissipation;65W/RDS(on);770mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.3pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Pd - Power Dissipation;65W/RDS(on);770mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.3pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.702nF/Output Capacitance(Coss);127pF


    N-Channel 650V 10A 65W Through Hole TO-220F

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