AGMSEMI-Single FETs, MOSFETs-AGM1405F

Description

Drain to Source Voltage;40V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;105W/RDS(on);3.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);170pF/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;2.6nF/Output Capacitance(Coss);370pF


N-Channel 40V 130A 105W Through Hole TO-220F

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;105W/RDS(on);3.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);170pF/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;105W/RDS(on);3.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);170pF/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;2.6nF/Output Capacitance(Coss);370pF


    N-Channel 40V 130A 105W Through Hole TO-220F

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