AGMSEMI-Single FETs, MOSFETs-AGM15T06C

Description

Drain to Source Voltage;150V/Gate Charge(Qg);19nC@10V/Number;1 N-channel/Pd - Power Dissipation;250W/RDS(on);6.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);140A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;5.025nF/Output Capacitance(Coss);410pF


N-Channel 150V 140A 250W Through Hole TO-220C

Product form

Drain to Source Voltage;150V/Gate Charge(Qg);19nC@10V/Number;1 N-channel/Pd - Power Dissipation;250W/RDS(on);6.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);140A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;150V/Gate Charge(Qg);19nC@10V/Number;1 N-channel/Pd - Power Dissipation;250W/RDS(on);6.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);140A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;5.025nF/Output Capacitance(Coss);410pF


    N-Channel 150V 140A 250W Through Hole TO-220C

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