AGMSEMI-Single FETs, MOSFETs-AGM20P07EL

Description

Drain to Source Voltage;20V/Gate Charge(Qg);7.8nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.7W/RDS(on);16mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);250pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));600mV/Ciss-Input Capacitance;980pF


P-Channel 20V 6.5A 1.7W Surface Mount SOT-23-3

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);7.8nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.7W/RDS(on);16mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);250pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));600mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);7.8nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.7W/RDS(on);16mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);250pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));600mV/Ciss-Input Capacitance;980pF


    P-Channel 20V 6.5A 1.7W Surface Mount SOT-23-3

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