AGMSEMI-Single FETs, MOSFETs-AGM20T09AT

Description

Drain to Source Voltage;200V/Gate Charge(Qg);145nC@10V/Number;1 N-channel/Pd - Power Dissipation;278W/RDS(on);9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);389pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;10.656nF


N-Channel 200V 110A 278W Through Hole TO-247

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);145nC@10V/Number;1 N-channel/Pd - Power Dissipation;278W/RDS(on);9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);389pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);145nC@10V/Number;1 N-channel/Pd - Power Dissipation;278W/RDS(on);9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);389pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;10.656nF


    N-Channel 200V 110A 278W Through Hole TO-247

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