AGMSEMI-Single FETs, MOSFETs-AGM2319EL

Description

Drain to Source Voltage;40V/Gate Charge(Qg);11.8nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.2W/RDS(on);63mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);42pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;553pF


P-Channel 40V 4A 1.2W Surface Mount SOT-23

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);11.8nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.2W/RDS(on);63mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);42pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);11.8nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.2W/RDS(on);63mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);42pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;553pF


    P-Channel 40V 4A 1.2W Surface Mount SOT-23

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