AGMSEMI-Single FETs, MOSFETs-AGM28P15C

Description

Drain to Source Voltage;150V/Gate Charge(Qg);123nC@10V/Number;1 P-Channel/Pd - Power Dissipation;180W/RDS(on);78mΩ@10V;81mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);115pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;8.24nF/Output Capacitance(Coss);182pF


150V 30A 180W Through Hole TO-220

Product form

Drain to Source Voltage;150V/Gate Charge(Qg);123nC@10V/Number;1 P-Channel/Pd - Power Dissipation;180W/RDS(on);78mΩ@10V;81mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);115pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;150V/Gate Charge(Qg);123nC@10V/Number;1 P-Channel/Pd - Power Dissipation;180W/RDS(on);78mΩ@10V;81mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);115pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;8.24nF/Output Capacitance(Coss);182pF


    150V 30A 180W Through Hole TO-220

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