AGMSEMI-Single FETs, MOSFETs-AGM30P05D

Description

Drain to Source Voltage;30V/Gate Charge(Qg);32nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;59.5W/RDS(on);5.5mΩ@10V;8.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);230pF/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;2.497nF


P-Channel 30V 75A 59.5W Surface Mount TO-252

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);32nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;59.5W/RDS(on);5.5mΩ@10V;8.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);230pF/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

$3.12 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);32nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;59.5W/RDS(on);5.5mΩ@10V;8.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);230pF/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;2.497nF


    P-Channel 30V 75A 59.5W Surface Mount TO-252

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