AGMSEMI-Single FETs, MOSFETs-AGM30P100D

Description

Drain to Source Voltage;30V/Gate Charge(Qg);122nC@10V/Number;1 P-Channel/Pd - Power Dissipation;100W/RDS(on);3.7mΩ@10V;5.6mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);755pF/Current - Continuous Drain(Id);128A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;5.77nF


P-Channel 30V 128A 100W Surface Mount TO-252

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);122nC@10V/Number;1 P-Channel/Pd - Power Dissipation;100W/RDS(on);3.7mΩ@10V;5.6mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);755pF/Current - Continuous Drain(Id);128A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

$0.60 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);122nC@10V/Number;1 P-Channel/Pd - Power Dissipation;100W/RDS(on);3.7mΩ@10V;5.6mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);755pF/Current - Continuous Drain(Id);128A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;5.77nF


    P-Channel 30V 128A 100W Surface Mount TO-252

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account