AGMSEMI-Single FETs, MOSFETs-AGM30P110A

Description

Drain to Source Voltage;30V/Gate Charge(Qg);150nC@10V/Number;1 P-Channel/Pd - Power Dissipation;138W/RDS(on);2.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);920pF/Current - Continuous Drain(Id);138A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;5.2nF


P-Channel 30V 138A 138W Surface Mount PDFN-8(5x6)

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);150nC@10V/Number;1 P-Channel/Pd - Power Dissipation;138W/RDS(on);2.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);920pF/Current - Continuous Drain(Id);138A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);150nC@10V/Number;1 P-Channel/Pd - Power Dissipation;138W/RDS(on);2.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);920pF/Current - Continuous Drain(Id);138A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;5.2nF


    P-Channel 30V 138A 138W Surface Mount PDFN-8(5x6)

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