AGMSEMI-Single FETs, MOSFETs-AGM314MAP

Description

Drain to Source Voltage;30V/Gate Charge(Qg);11.7nC@10V;13.2nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;29.7W/RDS(on);10mΩ@10V;18.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);91pF;117pF/Current - Continuous Drain(Id);30A;20A/Gate Threshold Voltage (Vgs(th));1.6V;1.5V/Ciss-Input Capacitance;623pF;750pF/Output Capacitance(Coss);102pF;188pF


N-Channel+P-Channel 30V 30A 29.7W Surface Mount PDFN3.3x3.3

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);11.7nC@10V;13.2nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;29.7W/RDS(on);10mΩ@10V;18.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);91pF;117pF/Current -... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);11.7nC@10V;13.2nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;29.7W/RDS(on);10mΩ@10V;18.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);91pF;117pF/Current - Continuous Drain(Id);30A;20A/Gate Threshold Voltage (Vgs(th));1.6V;1.5V/Ciss-Input Capacitance;623pF;750pF/Output Capacitance(Coss);102pF;188pF


    N-Channel+P-Channel 30V 30A 29.7W Surface Mount PDFN3.3x3.3

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