AGMSEMI-Single FETs, MOSFETs-AGM320ME

Description

Drain to Source Voltage;30V/Gate Charge(Qg);9nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.7W/RDS(on);110mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);3.6A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;315pF/Output Capacitance(Coss);59pF


N-Channel+P-Channel Array 30V 3.6A 1.7W Surface Mount SOT-23-6L

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);9nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.7W/RDS(on);110mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current -... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);9nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.7W/RDS(on);110mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);3.6A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;315pF/Output Capacitance(Coss);59pF


    N-Channel+P-Channel Array 30V 3.6A 1.7W Surface Mount SOT-23-6L

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