AGMSEMI-Single FETs, MOSFETs-AGM3401E

Description

Drain to Source Voltage;30V/Gate Charge(Qg);22nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.2W/RDS(on);43.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);68pF/Current - Continuous Drain(Id);4.4A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;1.04nF/Output Capacitance(Coss);80pF


P-Channel 30V 4.4A 1.2W Surface Mount SOT-23-3

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);22nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.2W/RDS(on);43.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);68pF/Current - Continuous Drain(Id);4.4A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);22nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.2W/RDS(on);43.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);68pF/Current - Continuous Drain(Id);4.4A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;1.04nF/Output Capacitance(Coss);80pF


    P-Channel 30V 4.4A 1.2W Surface Mount SOT-23-3

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