AGMSEMI-Single FETs, MOSFETs-AGM3407EL

Description

Drain to Source Voltage;30V/Gate Charge(Qg);6.5nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.25W/RDS(on);55mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);4.2A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;560pF/Output Capacitance(Coss);89pF


P-Channel 30V 4.2A 1.25W Surface Mount SOT-23

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);6.5nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.25W/RDS(on);55mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);4.2A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);6.5nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.25W/RDS(on);55mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);4.2A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;560pF/Output Capacitance(Coss);89pF


    P-Channel 30V 4.2A 1.25W Surface Mount SOT-23

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