AGMSEMI-Single FETs, MOSFETs-AGM402C

Description

Drain to Source Voltage;40V/Gate Charge(Qg);73nC@10V/Number;1 N-channel/Pd - Power Dissipation;250W/RDS(on);2.7mΩ@10V;4.1mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);360pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;4.14nF/Output Capacitance(Coss);405pF


N-Channel 40V 170A 250W Through Hole TO-220

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);73nC@10V/Number;1 N-channel/Pd - Power Dissipation;250W/RDS(on);2.7mΩ@10V;4.1mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);360pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);73nC@10V/Number;1 N-channel/Pd - Power Dissipation;250W/RDS(on);2.7mΩ@10V;4.1mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);360pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;4.14nF/Output Capacitance(Coss);405pF


    N-Channel 40V 170A 250W Through Hole TO-220

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