AGMSEMI-Single FETs, MOSFETs-AGM40P100H

Description

Drain to Source Voltage;40V/Gate Charge(Qg);106nC@10V/Number;1 P-Channel/Pd - Power Dissipation;135W/RDS(on);4.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);520pF/Current - Continuous Drain(Id);140A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;6.55nF


P-Channel 40V 140A 135W Surface Mount TO-263

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);106nC@10V/Number;1 P-Channel/Pd - Power Dissipation;135W/RDS(on);4.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);520pF/Current - Continuous Drain(Id);140A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);106nC@10V/Number;1 P-Channel/Pd - Power Dissipation;135W/RDS(on);4.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);520pF/Current - Continuous Drain(Id);140A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;6.55nF


    P-Channel 40V 140A 135W Surface Mount TO-263

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