AGMSEMI-Single FETs, MOSFETs-AGM40P26S

Description

Drain to Source Voltage;40V/Gate Charge(Qg);16nC@10V/Number;1 P-Channel/Pd - Power Dissipation;2.5W/RDS(on);32mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);100pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;1.1nF


P-Channel 40V 6A 2.5W Surface Mount SOP-8

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);16nC@10V/Number;1 P-Channel/Pd - Power Dissipation;2.5W/RDS(on);32mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);100pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);16nC@10V/Number;1 P-Channel/Pd - Power Dissipation;2.5W/RDS(on);32mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);100pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;1.1nF


    P-Channel 40V 6A 2.5W Surface Mount SOP-8

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